Negative thermal expansion in NbF_3 and NbOF_2:A comparative theoretical study

Thermal expansion control is always an obstructive factor and challenging in high precision engineering field. Here,the negative thermal expansion of Nb F_3 and Nb OF_2 was predicted by first-principles calculation with density functional theory and the quasi-harmonic approximation(QHA). We studied the total charge density, thermal vibration, and lattice dynamic to investigate the thermal expansion mechanism. We found that the presence of O induced the relatively strong covalent bond in Nb OF_2, thus weakening the transverse vibration of F and O in Nb OF_2, compared with the case of Nb F_3.In this study, we proposed a way to tailor negative thermal expansion of metal fluorides by introducing the oxygen atoms.The present work not only predicts two NTE compounds, but also provides an insight on thermal expansion control by designing chemical bond type.     

Non‐self‐adjoint singular second‐order dynamic operators on time scale

In this study, maximal dissipative second‐order dynamic operators on semi‐infinite time scale are studied in the Hilbert space , that the extensions of a minimal symmetric operator in limit‐point case. We construct a self‐adjoint dilation of the dissipative operator together with its incoming and outgoing spectral representations so that we can determine the scattering function of the dilation as stated in the scheme of Lax‐Phillips. Moreover, we construct a functional model of the dissipative operator and identify its characteristic function in terms of the Weyl‐Titchmarsh function of a self‐adjoint second‐order dynamic operator. Finally, we prove the theorems on completeness of the system of root functions of the dissipative and accumulative dynamic operators.     

硫化丁苯橡胶纳观界面耐磨机理及参数影响分析

硫化橡胶因其良好的力学和物理化学性能而被广泛作为摩擦副的基础材料. 本文提出了一种硫化交联算法, 实现了C—C键的硫化互交联和自交联, 构建了硫化丁苯橡胶的分子动力学磨损模型, 从微观摩擦学的角度阐明了硫化交联结构对改善丁苯橡胶磨损性能的机理, 研究了不同界面参数对硫化橡胶微观磨损性能的影响. 结果发现 硫化使丁苯橡胶分子链的界面黏附能力和活动能力更弱, 拉伸和解缠能力更低, 磨损过程中界面累积能量更低, 更不容易脱离橡胶基体, 因此可以表现出更好的摩擦学性能, 更强的抗磨损性能; 随着速度的增大, 硫化橡胶的磨损率降低, 与宏观实验结果一致, 原因是硫化橡胶的原子分布函数和相互作用能随着速度增大而降低, 说明橡胶分子链的黏附能力和活动能力随着速度增加趋弱, 温升更低, 导致较低的磨损率; 压入深度对磨损率的影响规律则呈现相反的结果和趋势.     

掺锗提高VO2薄膜的相变温度机理研究

二氧化钒(VO₂)作为一种长久以来备受关注的新型可逆相变材料,发展潜力巨大,其相变温度(T_MIT)的调控一直是研究热点。本文主要利用锗离子作为掺杂离子探索其对VO₂薄膜T_MIT的影响,并尝试解释其内部作用机理。在约1 cm²大小抛光的氧化铝薄片上沉积了一系列含不同比例锗离子VO₂薄膜。研究发现锗离子作为掺杂离子确实有利于T_MIT的提高(本课题T_MIT最大可达84.7 ℃)。T_MIT提高的主要原因是锗离子的引入能够强化单斜态V-V二聚体的稳定性,进而增强单斜态的稳定性,使得低温单斜态向四方金红石态转变更加困难。     

An adaptive multilevel wavelet framework for scale‐selective WENO reconstruction schemes

We put forth a dynamic computing framework for scale‐selective adaptation of weighted essential nonoscillatory (WENO) schemes for the simulation of hyperbolic conservation laws exhibiting strong discontinuities. A multilevel wavelet‐based multiresolution procedure, embedded in a conservative finite volume formulation, is used for a twofold purpose. (i) a dynamic grid adaptation of the solution field for redistributing grid points optimally (in some sense) according to the underlying flow structures, and (ii) a dynamic minimization of the in built artificial dissipation of WENO schemes. Taking advantage of the structure detection properties of this multiresolution algorithm, the nonlinear weights of the conventional WENO implementation are selectively modified to ensure lower dissipation in smoother areas. This modification is implemented through a linear transition from the fifth‐order upwind stencil at the coarsest regions of the adaptive grid to a fully nonlinear fifth‐order WENO scheme at areas of high irregularity. Therefore, our computing algorithm consists of a dynamic grid adaptation strategy, a scale‐selective state reconstruction, a conservative flux calculation, and a total variation diminishing Runge‐Kutta scheme for time advancement. Results are presented for canonical examples drawn from the inviscid Burgers, shallow water, Euler, and magnetohydrodynamic equations. Our findings represent a novel direction for providing a scale‐selective dissipation process without a compromise on shock capturing behavior for conservation laws, which would be a strong contender for dynamic implicit large eddy simulation approaches.     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。